forbidden gap
英 [fəˈbɪdn ɡæp]
美 [fərˈbɪdn ɡæp]
网络 禁带; 禁止能隙; 禁隙
双语例句
- The Forbidden Band Gap of Time-varying Magnetized Plasma Photonic Crystals
时变磁化等离子体光子晶体的禁带特性 - Spontaneous emission of the atom is apparently influenced by the relative position of the upper level from the forbidden gap.
原子上能级与光子晶体带边的相对位置将直接影响到原子自发辐射的模式。 - The heavily doping will narrow the forbidden gap and change the energy level in quantum wells.
重掺杂使半导体材料禁带宽度变窄，从而改变量子阱中能级的位置。 - An optical study of relation between forbidden band gap and stress in silicon crystals
硅晶体中禁带宽度与应力关系的光学研究 - The results show that such composite structures can lower the starting frequency and widen the forbidden band gap by the reasonable modulation and collocation of parameters of phononic crystals, and it is also found that such structures can reach the target of sound due to the good effectiveness.
结果表明，通过参数的合理调制和搭配，这种声子晶体复合结构能够降低起始频率和提高禁带宽度，达到人们所要求的隔声目标和良好的隔声效果。 - The transmittance of light is forbidden in a wavelength range called photonic band gap. Photonic crystals have broader application prospect than common optical materials.
光子晶体的基本特征是具有光子带隙，频率落在带隙中的光将不能传播，这使其比普通光学材料具有更广泛的应用。 - When the nonlinearity is self-focusing, there exists an asymmetric forbidden band near DP which can be modulated by the strength of the nonlinearity. However, the self-defocusing nonlinearity can completely eliminate the asymmetric band gap.
我们发现当非线性衬底为自聚焦非线性时，在DP附近存在一个非对称的禁带；然而非线性衬底为自散焦非线性时却可以消除这个禁带。 - Due to the performances of solar cell is strongly sensitive to temperature, mechanism analysis mainly includes the following three parts: the effects of temperature on forbidden energy gap; the effects of temperature on carriers 'velocity and the effects of temperature on scattering.
太阳电池性能对温度十分敏感，从机理分析出发，主要是温度对禁带宽度的影响，对载流子运动速度的影响和对散射三个方面的影响。 - According to the Bloch theory, the photonic crystal band gap characteristics are analyzed with an analysis-method of edge forbidden band. Meanwhile, when the one-dimensional photonic crystal band gap position is analyzed, such an approach is easier than the transfer matrix. 3.
从布洛赫理论出发，用禁带边缘法分析了光子晶体的禁带特征，这种方法在分析一维光子晶体的禁带位置时比传输矩阵理论简单。 - Zinc oxide ( ZnO) and zinc sulphide ( ZnS) are typical II-VI group semiconductors, and both of them are direct-gap semiconductors with the forbidden gap energy of 3.37 and 3.6 eV at room temperature.
氧化锌（ZnO）和硫化锌（ZnS）是典型的Ⅱ-Ⅵ族半导体材料，均为直接带隙半导体，室温下禁带宽度分别为3.37和3.6eV。 - The emergence of the wide forbidden band gap and the enhancement of electric fields in the system are intriguing in designing devices such as band-pass metal filter and biosensors and so on.
宽光子禁带的出现以及近场增强效应可以用来设计带宽滤通器及生物传感器等。